all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! data sheet 1 of 9 rev. 02, 2015-03-03 pxfc211507sc thermally-enhanced high power rf ldmos fet 150 w, 28 v, 2110 ? 2170 mhz description the pxfc211507sc is a 150-watt ldmos fet intended for use in multi-standard cellular power ampli er applications in the 2110 to 2170 mhz frequency band. features include input and out- put matching, high gain and a thermally-enhanced package with earless anges. manufactured with in neon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. pxfc211507sc package h-37248g-4/2 (formed leads) features ? broadband internal input and output matching ? typical pulsed cw performance, 2170 mhz, 28 v, 10 ? pulse width, 10% duty cycle - output power at p 1db = 150 w - efficiency = 56% - gain = 19 db ? typical single-carrier wcdma performance, 2170 mhz, 28 v, 8 db par @ 0.01% ccdf, test model 1 with 64dpch - output power = 32 w - efficiency = 32% - gain = 20 db ? capable of handling 10:1 vswr @28 v, 150 w (cw) output power ? integrated esd protection ? esd rating: human body model, class 2 (per ansi/esda/jedec js-001 ? low thermal resistance ? pb-free and rohs compliant rf characteristics two-carrier wcdma specifications (tested in infineon test fixture) v dd = 28 v, i dq = 960 ma, p out = 32 w avg, 1 = 2160 mhz, 2 = 2170 mhz, 3gpp wcdma signal, 3.84 mhz channel bandwidth, 8 db peak/average @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 19 20.4 ?db drain ef ciency ? d 29 32.9 ?% intermodulation distortion imd ? ?0.5 ?8 dbc 0 8 16 24 32 40 48 56 14 15 16 17 18 19 20 21 29 33 37 41 45 49 53 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, v gs = 2.6 v, i dq = 960 ma, ? = 2115 mhz, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw gain efficiency c211507sc-gr1a
pxfc211507sc data sheet 2 of 9 rev. 02, 2015-03-03 dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ?? 1 ? v ds = 63 v, v gs = 0 v i dss ??10 ? gate leakage current v gs = 10 v, v ds = 0 v i gss ?? 1 ? on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ?0.05 ? ? operating gate voltage v ds = 28 v, i dq = 960 ma v gs 2.3 2.6 2.9 v maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ? to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 ? storage temperature range t stg ?5 to +150 ? thermal resistance (t case = 70?, 150 w cw, 28 v) r jc 0.56 ?/w ordering information type and version order code package and description shipping pxfc211507sc v1 r250 PXFC211507SCV1R250XTMA1 h-37248g-4/2, earless ange, tape & reel, 250 pcs formed leads
data sheet 3 of 9 rev. 02, 2015-03-03 pxfc211507sc typical performance (data taken in a production test xture) 0 8 16 24 32 40 48 56 14 15 16 17 18 19 20 21 29 33 37 41 45 49 53 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, v gs = 2.6 v, i dq = 960 ma, ? = 2140 mhz, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw gain efficiency c211507sc-gr1b 0 8 16 24 32 40 48 56 14 15 16 17 18 19 20 21 29 33 37 41 45 49 53 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, v gs = 2.6 v, i dq = 960 ma, ? = 2165 mhz 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw gain efficiency c211507sc-gr1c 0 10 20 30 40 50 -65 -55 -45 -35 -25 -15 29 33 37 41 45 49 53 drain efficiency (%) imd & acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, v gs = 2.6 v, i dq = 960 ma, ? = 2115 mhz 3gpp wcdma signal: 8 db par, 10 mhz carrier spacing, 3.84 mhz bw imd low imd up acpr efficiency c211507sc-gr2a 0 10 20 30 40 50 -65 -55 -45 -35 -25 -15 29 33 37 41 45 49 53 drain efficiency (%) imd & acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, v gs = 2.6 v, i dq = 960 ma, ? = 2140 mhz 3gpp wcdma signal: 8 db par, 10 mhz carrier spacing, 3.84 mhz bw imd low imd up acpr efficiency c211507sc-gr2b
pxfc211507sc data sheet 4 of 9 rev. 02, 2015-03-03 typical performance (cont.) 0 10 20 30 40 50 -65 -55 -45 -35 -25 -15 29 33 37 41 45 49 53 drain efficiency (%) imd & acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, v gs = 2.6 v, i dq = 960 ma, ? = 2165 mhz 3gpp wcdma signal: 8 db par, 10 mhz carrier spacing, 3.84 mhz bw imd low imd up acpr efficiency c211507sc-gr2c -55 -45 -35 -25 -15 29 33 37 41 45 49 53 imd (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, v gs = 2.6 v, i dq = 960 ma, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw 2115 imdl 2115 imdu 2140 imdl 2140 imdu 2165 imdl 2165 imdu c211507sc-gr3 0 10 20 30 40 50 60 15 16 17 18 19 20 21 27 32 37 42 47 52 57 efficiency (%) power gain (db) output power (dbm) cw performance at seleted v dd i dq = 960 ma, ? = 2115 mhz gain efficiency v dd = 24 v v dd = 28 v v dd = 32 v c211507sc-gr5a 0 10 20 30 40 50 60 70 14 15 16 17 18 19 20 21 27 32 37 42 47 52 57 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 960ma 2115 mhz 2140 mhz 2165 mhz gain efficiency c211507sc-gr4
data sheet 5 of 9 rev. 02, 2015-03-03 pxfc211507sc 0 10 20 30 40 50 60 15 16 17 18 19 20 21 27 32 37 42 47 52 57 efficiency (%) power gain (db) output power (dbm) cw performance at selected v dd i dq = 960 ma, ? = 2140 mhz gain efficiency v dd = 24 v v dd = 28 v v dd = 32 v c211507sc-gr5b 0 10 20 30 40 50 60 15 16 17 18 19 20 21 27 32 37 42 47 52 57 efficiency (%) power gain (db) output power (dbm) cw performance at selected v dd i dq = 960 ma, ? = 2165 mhz gain efficiency v dd = 24 v v dd = 28 v v dd = 32 v c211507sc-gr5c -12 -10 -8 -6 -4 13 15 17 19 21 1950 2050 2150 2250 2350 input return loss (db) power gain (db) frequency (mhz) small signal cw performance v dd = 28 v, i dq = 960 ma gain input return loss c211507sc-gr6 typical performance (cont.)
pxfc211507sc data sheet 6 of 9 rev. 02, 2015-03-03 reference circuit assembly, 2110 ? 2170 mhz dut pxfc211507sc v1 reference circuit no. ltn/pxfc211507sc v1 order code ltnptfc211507sce3tobo1 pcb rogers 4350, 0.508 mm [0.020? thick, 2 oz. copper, ? r = 3.66 find gerber files for this test fixture on the infineon web site at http://www.infineon.com/rfpower load pull performance z source z load g s d pulsed cw signal: 10 ?, 10% duty cycle, v dd = 28 v, i dq = 960 ma p 1db class ab max output power max pae freq [mhz] zs [ ] zl [ ] gain [db] p out [dbm] p out [w] pae [%] zl [ ] gain [db] p out [dbm] p out [w] pae [%] 2110 2.10 ?j6.55 1.52 ?j4.82 18.9 52.10 163 53.7 2.30 ?j3.60 21.1 50.90 123 62.5 2140 2.31 ?j6.77 1.58 ?j4.87 19.2 52.10 163 54.0 2.22 ?j3.56 21.4 50.80 120 62.4 2170 3.07 ?j7.01 1.57 ?j4.95 19.4 52.20 166 54.0 2.21 ?j3.64 21.7 50.90 123 62.5
data sheet 7 of 9 rev. 02, 2015-03-03 pxfc211507sc reference circuit assembly diagram (not to scale) components information component description manufacturer p/n in c101 capacitor, 10 ? taiyo yuden umk325c7106mm-t c102, c103 capacitor, 10 pf atc atc800a100jw150xb c801, c802, c803 capacitor, 0.001 ? panasonic ecj-1vb1h102k r101, r801, r805 resistor, 10 ohms panasonic electronic components erj-8geyj100v r802 resistor, 100 ohms panasonic electronic components erj-8geyj101v r803 resistor, 1.3k ohms panasonic electronic components erj-3geyj132v r804 resistor, 1.2k ohms panasonic electronic components erj-3geyj122v s1 variable resistor, 2k ohms bourns inc. 3224w-1-202e s2 voltage regulator fairchild semiconductor lm7805ct s3 transistor fairchild semiconductor bcp56 out c201, c204, c205, c206, c207, c208, c209, c210 capacitor, 10 ? taiyo yuden umk325c7106mm-t c202, c203 capacitor, 220 ? panasonic electronic components eee-fp1v221ap c211 capacitor, 10 pf atc atc800a100jw150xb reference circuit (cont.) pxfc211507sc_out_02 c201 c211 c202 c203 c204 c207 c208 c210 c209 c206 c205 (61) ro4350, .020 pxfc211507sc_in_02 r802 r804 r803 r805 r801 c801 c803 c802 r101 c102 c101 c103 rf_in rf_ out pxac211507sc_cd_02-13-15 220 vfp. 3r3 220 vfp. 3r3 ro4350, .020 (61) v dd v dd s1 s2 s3 v gg pxfc211507sc
pxfc211507sc data sheet 8 of 9 rev. 02, 2015-03-03 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower package outline specifications package h-37248g-4/2 (formed leads) & / & / & / * ' 9 9 & / 6 & / ? > ? @ ? > ? @ ? > ? @ ; > @ ; 5 > 5 @ > @ ? [ > @ ; ? ; > @ > @ > @ > @ > @ > @ ? > ? @ ; > @ 6 3 + 9 ? > ? @ ; ? ? ? ; ? > ? @ 6 3 + ' * ; ? > ? @ 6 3 + ' * + * b j z b b ' diagram notes?nless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994 2. primary dimensions are mm, alternate dimensions are inches 3. all tolerances ?0.127 [0.005] 4. pins: d ?drain, g ?gate, s ?source (flange), v ?supply voltage 5. lead thickness: 0.10 +0.051/?.025 mm [.004 +.002/?001 inch] 6. gold plating thickness: 1.14 ?0.38 micron [45 ?15 microinch]
we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: (highpowerrf@in? neon.com) to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international data sheet 9 of 9 rev. 02, 2015-03-03 edition 2015-03-03 published by in? neon technologies ag 85579 neubiberg, germany ? 2013 in? neon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intende d to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. pxfc211507sc v1 revision history revision date data sheet page subjects (major changes at each revision) 01 2014-05-09 advance all proposed speci cation for new product development. 02 2015-03-03 production all complete nal speci cations, including production data, performance curves, refer- ence circuit layout and load pull information.
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